论文部分内容阅读
半导体器件可靠性的提高取决于以下因素:合理的设计方案、先进的工艺措施、严格的质量控制、适当的筛选程序、及时的失效分析及反馈等。这一讲我们讨论通过设计及工艺措施改进器件的可靠性,包括失效分析中提出的纠正措施在设计与工艺中的实施。重点涉及双极集成电路;因平面晶体管及MOS电路与其基本工艺是相同的。一、设计中的可靠性考虑 1.结构设计(包括引线的材料及方案选择、芯片到管壳的组装方法、管壳种类等) 当有缺陷的芯片已被剔除后,结构特性对器件在电应力和环境应力下的性能起着决定作用。结构设计需要考虑电学、热学及机械性能是否满足高可靠性的要求,对于小功率管和一般集成电路,功率在毫瓦范围,结温由适当的管壳散热来控制,在设计中只需要计算电参数要求,结构根据可靠性的要求适当选择即可。对于大功率器件,功率在数
Improve the reliability of semiconductor devices depends on the following factors: a reasonable design, advanced process measures, strict quality control, proper screening procedures, timely failure analysis and feedback. This talk discusses ways to improve the reliability of your device through design and process measures, including the design and process implementation of corrective actions from failure analysis. The emphasis is on bipolar integrated circuits; planar transistors and MOS circuits are the same as their basic counterparts. First, the reliability of the design considerations 1. Structural Design (including the choice of lead materials and options, the chip to the shell assembly method, the shell type, etc.) When the defective chip has been removed, the structural characteristics of the device in the electricity Stress and environmental stress performance plays a decisive role. Structural design needs to consider whether electrical, thermal and mechanical properties meet the requirements of high reliability. For low-power and general-purpose integrated circuits, the power is in the milliwatt range and the junction temperature is controlled by the proper tube heat dissipation. Electrical parameters, structure, according to the reliability of the appropriate choice can be. For high-power devices, the power in a few