多栅场效应管技术有望成为应对集成电路小型化所带来的各种技术挑战的理想解决方案。与当今的平面单栅技术相比,多栅技术能够在保持高功能性的同时大幅度削减功耗。在这项新技术的一次演示中,英飞凌研究人员成功测试世界上第一个运用全新65纳米多栅晶体管结构制造的复杂集成电 Multi-gate FET technology is expected to be the ideal solution to the various technical challenges associated with the miniaturization of integrated circuits. In contrast to today’s flat single-gate technology, multi-gate technology can dramatically reduce power consumption while maintaining high functionality. In a demonstration of this new technology, Infineon researchers successfully tested the world’s first complex integrated circuit fabricated with the new 65-nm multi-gate transistor structure