碳纳米管自上世纪90年代初发现以来,已经引起了研究者极大兴趣。碳纳米管具有金属性或者半导体性取决于它的手性指数,但是手性指数即电子能带结构不可控一直是一个难题。由于半导体性与金属性纳米管混存且难以分离,造成了碳纳米管纳电子学应用的瓶颈。三元B-C-N纳米管可被看作是碳纳米管晶格中的部分C原子被B、N原子取代掺杂后的产物。石墨相B-C-N三元化合物是介于石墨(半金属)与六方氮化硼(h-BN,绝缘体)之间的半导体,能隙随成 Since the discovery of carbon nanotubes in the early 1990s, researchers have drawn great interest. Carbon nanotubes with metallic or semiconducting properties depend on their chiral index, but the fact that the chiral index, ie the electronic band structure is not controllable, has always been a challenge. Due to the coexistence of semiconducting and metallic nanotubes and the difficulty of separation, the bottleneck of the application of nanometer nanotubes in nanoelectronics is caused. Ternary B-C-N nanotubes can be seen as the carbon atoms in the lattice of C atoms were replaced by B, N atoms doped products. Graphite phase B-C-N ternary compound is a semiconductor between graphite (semimetal) and hexagonal boron nitride (h-BN, insulator)