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A method of QWI (quantum well intermixing) realizing through plasma-enhanced chemical vapordepositiom (PECVD) SiO_2 film following ion implantation was investigated. PECVD 200 nm SiO_2 film after 160 keV phosphorus(P) ion implantation was performed to induce InP-based multiple-quantum-well (MQW) laser structural intermixing, annealing process was carried out at 780 ℃ for 30 seconds under N_2 flue, the blue shift of photoluminescence (PL) peak related to implanted dose: 1×10~ 11 ,1×10~ 12 ,1×10~ 13 ,3×10~ 13 , 7×10~ 13 ion/cm~2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. Under the same conditions, by comparing the blue shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO_2 film. So, the blue shift results mainly from ion implantation. However, SiO_2 film also may promote the quantum well intermixing.
A method of QWI (quantum well intermixing) realizing plasma-enhanced chemical vapor deposition (PECVD) SiO_2 film ion implantation was investigated. PECVD 200 nm SiO 2 film after 160 keV phosphorus (P) ion implantation was performed to induce InP-based multiple- quantum well (MQW) laser structural intermixing, annealing process was carried out at 780 ° C. for 30 seconds under N 2 flue, blue shift of photoluminescence (PL) peak related to implanted dose: 1 × 10-11, 1 × 10-12 , 1 × 10 ~ 13, 3 × 10 ~ 13, 7 × 10 ~ 13 ion / cm ~ 2 is 22 nm, 65 nm, 104 nm, 109 nm, 101 nm, respectively. shift of PL peak with P ion implantation only, slight differentiation between the two methods was observed, and results reveal that the defects in the implanting layers generated by ion implantation are much more than those in SiO_2 film. So, the blue shift results mainly from ion implantation. However, SiO 2 film may also promote the quantum well interm ixing.