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评述砷化镓中硅SIMS定量分析的进展，讨论了相对灵敏度因子法。对此种GaAs的原始参考物质，用实验确认了其可靠性。为常规定量分析研制了二次参考物质。对一些关键实验因素，如样品装载、仪器参数以及离子选择等进行了仔细研究，并评价它们对定量重复性、精确性、检测限和基体效应的影响。Cs+源入射时GaAs中Si定量分析精度在15％内；检测AsSi二次离子时，29Si的检测限达5×1014atoms／cm3。
The progress of quantitative analysis of SIMS in gallium arsenide is reviewed, and the relative sensitivity factor method is discussed. The original reference material for this kind of GaAs was experimentally confirmed its reliability. A secondary reference material was developed for routine quantitative analysis. Some key experimental factors such as sample loading, instrument parameters and ion selection were carefully studied and their impact on quantitative reproducibility, accuracy, limit of detection, and matrix effects was evaluated. The accuracy of quantitative analysis of Si in GaAs is less than 15% when the Cs + source is incident, and the detection limit of 29Si is 5 × 1014 atoms / cm3 when the AsSi secondary ions are detected.