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在外延气氛中对SIMOX/SOI样品作了不同条件的烘烤.RBS分析表明,高温外延气氛对SIMOX/SOI结构有严重的损伤,主要表现为H_2对表层硅的剥离,H_2通过穿透性缺陷使埋层SiO_2的分解和使表层硅缺陷的扩展损伤。
The SIMOX / SOI samples were baked under different conditions in the epitaxial atmosphere.RBS analysis showed that the high temperature epitaxial atmosphere had a serious damage to the SIMOX / SOI structure, mainly due to the exfoliation of H 2 on the surface silicon and the penetration of H 2 through the penetrating defects So that the decomposition of buried SiO 2 and the expansion of surface defects of silicon damage.