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实验分别测量了Ti-Si0.84Ge0.16与Ti-Si系统在依次经历700℃及730~900℃两步退火后的方块电阻。对比结果表明,Ti的锗硅化物与Ti的硅化物具有不同的温度特性。造成这一差异的原因与Ge原子在高温下的行为有关。实验利用XRD,研究了Ti(SiGe)2从C49相到C54相的转变。物相分析结果显示,其相转变温度在760~800℃之间。结合实验结论,对采用Ti硅化物工艺的自对准SiGe HBT进行了退火温度的优化,其适合的高温退火温度为850℃左右。
The experiment measured the sheet resistance of Ti-Si0.84Ge0.16 and Ti-Si system after two-step annealing at 700 ℃ and 730 ~ 900 ℃ respectively. The comparison results show that Ti silicide and Ti silicide have different temperature characteristics. The reason for this difference is related to the behavior of Ge atoms at high temperatures. In the experiment, the transformation of Ti (SiGe) 2 from C49 phase to C54 phase was studied by XRD. Phase analysis results show that the phase transition temperature between 760 ~ 800 ℃. Combined with the experimental results, the annealing temperature of the self-aligned SiGe HBT with Ti silicide process is optimized, and the suitable high temperature annealing temperature is about 850 ℃.