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大部分的薄膜电阻是将金属氧化物作为一种成分,再将该部分与其他金属进行多种组合形成的。从前,非常稳定的薄腹电阻开始是镍-铬电阻,但镍-铬电阻的缺点是其薄层电阻值低,最高只能获得200～250欧姆/□。当然对比此电阻率高的要求就不能满足了。因此,又研制出铬-一氧化硅系薄膜金属陶瓷电阻。此种薄膜金属陶瓷可以在真空中用电阻加热蒸发源蒸发,而且电阻率高、比较稳定。因此,即使是现在,在需要高阻的情形下,也经常用它。另外还对替代铬-一氧化硅的其他金属陶瓷电阻进行过多方面的研究,但各有优缺点。到目前为止,还尚未研制成完全满意的理想金属陶瓷。因此,本文将择述较有前途的薄膜电阻的情形。在衬底上涂敷金属陶瓷的方法有真空蒸发法、闪烁蒸发法和溅射法(直流溅射或射频溅射)等。本文将以此为中心加以阐述。
Most of the sheet resistance is the metal oxide as a component, then the part with a variety of other metals formed by a combination of. In the past, the very stable thin web resistance started as a nickel-chromium resistance, but the disadvantage of the nickel-chromium resistance was its low sheet resistance with a maximum of only 200-250 ohms / square. Of course, the high resistivity requirements can not be satisfied. Therefore, we have developed a chromium - silicon oxide film metal-ceramic resistors. Such thin-film cermets can be evaporated in a vacuum with a resistance heating evaporation source, and the resistivity is high and relatively stable. Therefore, even now, it is often used where high resistance is required. In addition to the alternative to chromium - silicon oxide other cermets too many studies, but each have their own advantages and disadvantages. So far, it has not yet been developed into a completely satisfactory ideal cermet. Therefore, this article will choose the more promising case of thin film resistors. Methods of coating the cermet on the substrate include a vacuum evaporation method, a flash evaporation method, and a sputtering method (direct current sputtering or radio frequency sputtering). This article will be centered on this elaboration.