目前功率半导体厂商开始由硅转向替代材料,更具体地说是碳化硅(SiC)和氮化镓(GaN)。业界采用在硅衬底和氮化铝缓冲层之上生长GaN的技术来降低成本。这使得设备厂商可以利用现有硅制程技术在衬底上生长PN结。GaN定价也从原先10-15倍于传统硅下降到更容易接受的水平。 Currently, power semiconductor manufacturers are beginning to shift from silicon to alternative materials, and more specifically, silicon carbide (SiC) and gallium nitride (GaN). The industry has adopted the technology of growing GaN on the silicon substrate and aluminum nitride buffer layer to reduce the cost. This allows equipment manufacturers to use existing silicon process technology to grow PN junctions on the substrate. GaN pricing from the original 10-15 times lower than the traditional silicon to a more acceptable level.