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在研制双极大规模集成电路的过程中,人们认识到以下三个特点:(1)饱和型开关电路以共发射极三极管为基本开关元件,因此,如果用基片作为发射区就可以省略掉三极管之间的隔离;(2)电路中的电阻是无源元件,它既消耗功率,又占据面积。用有源元件来做负载,既可降低功耗,又可增加集成度;(3)晶体管的PN结与附近其它PN结形成寄生三极管,一般应尽量减少寄生二极管的作用,措施是加大PN结之间的距离,因此,集成度受到限制,如果利用寄生三极管作为电路中的元件,则一方面可以简化工艺,同时又可增加集成度。1971年以来,人们沿着这些思路来探讨新的存贮和运算控制单元〔1〕-〔7〕。实践证明:利用横向PNP晶体管来作为供电电源,既起供电和负载的作用,又充分利用了寄生三极管的作用;利用反向NPN晶体管为开关元件既免去或减少了隔离区,减小了收集区的面积,而且,基片本身就形成了发射极这间的互连。
In the development of bipolar large scale integrated circuits, people recognize the following three characteristics: (1) saturated switching circuit to the common emitter transistor as the basic switching element, so if the substrate as a launch area can be omitted Transistor isolation; (2) resistance in the circuit is a passive component, which consumes power, but also take up an area. The use of active components to do the load, both to reduce power consumption, but also increase the integration; (3) PN junction transistor and other nearby PN junction parasitic transistor, the general should minimize the parasitic diode, the measure is to increase the PN Therefore, the integration is limited, if the use of parasitic transistors as components in the circuit, on the one hand can simplify the process, while increasing the degree of integration. Since 1971, people along these lines to explore new storage and computing control unit [1] - [7]. Practice has proved that: the use of horizontal PNP transistor as the power supply, both from the role of power supply and load, but also take full advantage of the parasitic transistor; the use of reverse-phase NPN transistors as the switching element eliminates or reduces the isolation area, reducing the collection Area of the area, moreover, the substrate itself forms the emitter of this interconnection.