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本文叙述了在 Howard 提出的 X-射线反射形貌法的基础上,采用加第三狭缝,对半导体材料进行反射实验的方法。并以 GaAs 材料(吸收系数较大)为例,进一步说明了反射形貌法是一种检测半导体表面层缺陷的简便、有效方法。其优点是:(1)非破坏性检验;(2)能得到较大面积的晶体表面缺陷分布;(3)与 X-射线透射法及其他方法相结合,能更详细地了解到材料表面缺陷和体内缺陷的关系;(4)在器件制造工艺过程中,可作为检验表面工艺的跟踪手段。
This paper describes a method of reflecting the semiconductor material by using a third slit based on the X-ray reflection topography method proposed by Howard. Taking GaAs material (the absorption coefficient is larger) as an example, it is further demonstrated that the reflection topography is a simple and effective method to detect semiconductor surface layer defects. The advantages are: (1) non-destructive testing; (2) large surface area distribution of crystal defects can be obtained; (3) in combination with X-ray transmission and other methods, And the relationship between the defects in the body; (4) in the process of device manufacturing, can be used as a means of tracking surface technology.