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Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.
Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system (ECR-PEMOCVD) with trimethyl gallium (TMGa) as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), atomic force microscopy (AFM) and Raman scattering. GaN films with small surface roughness and high c- orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage (IV) curve. GaN / Ti / glass structure has great potential dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.