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本文研究了交流电致循环热应变作用下200 nm厚Au薄膜的失效行为.结合实验结果和理论计算,确定了交流电作用下6μm宽Au薄膜导线上的温度分布,并由此确定了Au互连线在交流电作用下达到稳定状态后的循环热应变范围.结果表明,应变范围△ε≤0.35%,经过5×10~6cyc热循环后,Au互连线中的晶粒出现不同程度的增长,晶界损伤导致Au互连线的最终失效.对Au薄膜热疲劳、机械疲劳失效行为及其机制进行了分析.
In this paper, the failure behavior of a 200 nm thick Au thin film under AC cyclic thermal strain was investigated. The temperature distribution on a 6 μm wide Au thin film conductor was determined by the experimental results and theoretical calculations, and the Au interconnection line The results show that the strain range △ ε≤0.35%, after 5 × 10 ~ 6cyc thermal cycling, the grain growth in the Au interconnection lines to varying degrees of growth, the crystal Boundary damage leads to the final failure of the Au interconnection line.The behavior of the thermal fatigue and mechanical fatigue failure of the Au thin film and its mechanism are analyzed.