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最近国外成功地用分子束外延法在Si衬底上生长出高质量的GaAs多晶.他们在3英寸Si衬底上研制出基极调制掺杂GaAs FETs(MODFETs),MESFETs和异质结双极晶体管,还成功地利用这项技术将SiMOSFETs与GaAsMESFETs进行集成.用Si作衬底生长的GaAs MESFETs跨导及夹断电压等性能均好于在GaAs衬底上制造的器件性能.
Recently, molecular beam epitaxy was successfully used to grow high quality GaAs polycrystals on Si substrate.They developed base modulation doped GaAs FETs (MODFETs), MESFETs and heterojunction Pole transistors and has successfully used this technology to integrate SiMOSFETs with GaAsMESFETs.The performance of devices fabricated on GaAs substrates such as transconductance and pinch-off voltage of GaAs MESFETs grown with Si is superior.