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报道了蓝宝石衬底、栅长为0.3μm AlGaN/GaN HEMT器件的制备,在未采用散热设备的条件下测得栅宽为100μm器件的饱和电流为55.9mA,最大源漏电流为92.1mA。对器件的跨导特性进行了对比,得到最大跨导为306mS/mm的器件。同时对器件进行了微波小信号测试,推导出截止频率fT和最高振荡频率fmax分别为18.5GHz和46GHz。
A sapphire substrate with a gate length of 0.3μm AlGaN / GaN HEMT device was reported. The saturation current of the 100μm gate-width device was 55.9mA and the maximum source-drain current was 92.1mA when no heat sink was used. Transconductance characteristics of the device were compared to obtain the maximum transconductance of 306mS / mm device. At the same time, microwave small signal test was carried out on the device, and the cutoff frequency fT and the maximum oscillation frequency fmax were respectively 18.5GHz and 46GHz.