论文部分内容阅读
叙述在MBE(分子束外延)GaAs/Si材料上制作GaAs MESFET与Ic的研究。考虑到GaAsIC与Si IC单片集成的需要,采用了Ti/TiW/Au肖特基金属化和Ni/AuGe/Ni/Au欧姆接触金属化,层间介质采用等离子增强淀积氮化硅和聚酰亚胺复合材料。在该工艺基础上,制备了性能良好的GaAs/Si MESFET与IC。
The fabrication of GaAs MESFETs and Ic on MBE (molecular beam epitaxy) GaAs / Si materials is described. Taking into account the GaAsIC and Si IC monolithic integration needs, the use of Ti / TiW / Au Schottky metallization and Ni / AuGe / Ni / Au ohmic contact metallization, interlayer dielectric plasma enhanced deposition of silicon nitride and poly Imide composite material. Based on this process, GaAs / Si MESFETs and ICs with good performance were prepared.