一、引言低温放电产生氮化硅工艺领域越来越重要。等离子体氮化硅(SiN)薄膜基本性质已通过成分、折射率、内应力、密度和振动谱研究过,所有这些性质都对诸如气体成分、射频功率和衬底温度等淀积参数很敏感。由 I. INTRODUCTION The field of low temperature discharge silicon nitride process is more and more important. The basic properties of plasma-enhanced silicon nitride (SiN) films have been studied by composition, refractive index, internal stress, density and vibration spectra, all of which are sensitive to deposition parameters such as gas composition, RF power and substrate temperature. by