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We demonstrate that the GaAs/AlGaAs nanowires(NWs) ensemble is fabricated into photo-detectors. Current–voltage(I–V) characteristics are measured on Ga As/Al Ga As core–shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10~(13) cm~(-2) to 5.0 × 10~(14) cm~(-2). The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferable potential candidate for space applications.
Current-voltage (I-V) characteristics are measured on Ga As / Al Ga As core-shell ensemble NW photo-detectors at room-temperature before and after 1-MeV proton irradiation with fluences from 1.0 × 10 ~ (13) cm -2 to 5.0 × 10 ~ (14) cm -2. The degradation of photocurrent suggests that the point defects induced by proton radiation could cause both carrier lifetime and carrier mobility to decrease synchronously. Comparing with a GaAs quantum well, the degradations of light and dark current for the irradiated NWs photo-detector indicate that NWs material is a preferred potential candidate for space applications.