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据美国“微波”杂志1978年第11期报导:日本富士通公司实验室介绍了一种产品,即4千兆赫、10瓦的金属半导体场效应管放大器,可用来代替行波管放大器。这种放大器是由一个5级的金属半导体场效应晶体管放大器组件和直流电源所组成,在1分贝压缩
According to the American “Microwave” magazine in November 1978 No. 11 reported: Japan's Fujitsu Labs introduced a product that 4 GHz, 10-watt metal-semiconductor FET amplifier can be used instead of traveling wave tube amplifier. This amplifier is composed of a 5-level metal-semiconductor FET transistor amplifier components and DC power supply in the 1 db compression