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采用低压金属有机化学气相沉积(LP MOCVD)技术,在普通石英衬底上制备出不同Cd组分(0.02,0.44,0.59,0.83,0.91)的Zn1-xCdxS合金薄膜材料。X射线测量表明样品为单一取向的纤锌矿结构,并且随着x的增加衍射峰位基本成线性地从ZnS衍射峰向CdS衍射峰移动。此外,在PL谱中还可以看出随着样品中Cd含量的增加,发光峰从3.66eV红移到2.43eV。根据发光峰位与Zn1-xCdxS中x的变化关系,推导出它们之间的关系近似为Eg(Zn1-xCdxS)=3.61-1.56x+0.38x2。还探讨了不同Cd组分薄膜材料的X射线衍射峰半峰全宽以及发光峰半峰全宽的变化。
Zn1-xCdxS alloy thin films with different Cd contents (0.02,0.44,0.59,0.83,0.91) were prepared on common quartz substrates by low pressure metalorganic chemical vapor deposition (LPMOCVD). The X-ray measurements showed that the sample was of a unidirectional wurtzite structure and the diffraction peak moved essentially linearly from the ZnS diffraction peak to the CdS diffraction peak as x increased. In addition, it can also be seen in the PL spectra that as the Cd content in the sample increases, the emission peak shifts from 3.66eV to 2.43eV. According to the relationship between the emission peak and the change of x in Zn1-xCdxS, the relation between them is approximately Eg (Zn1-xCdxS) = 3.61-1.56x + 0.38x2. The full width at half maximum (FWHM) and full width at half maximum (FWHM) of XRD peaks of different Cd films were also investigated.