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本文描述了一种可用于集成系统的高速BiCMOS技术。采用双埋层、双阱和外延结构,应用2μm设计规则,成功地将NPN器件和CMOS器件制作在同一芯片上。得到了满意的单管性能。在大负载条件下,BiCMOS反相器门的速度比普通CMOS反相器门快得多。
This article describes a high-speed BiCMOS technology that can be used in integrated systems. Using dual buried layers, double wells and epitaxial structures, NPN devices and CMOS devices are successfully fabricated on the same chip using 2μm design rules. Have been satisfied with the performance of single-tube. Under heavy load conditions, BiCMOS inverter gates are much faster than normal CMOS inverter gates.