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本文用薄晶体电镜,x射线衍射形貌和金相腐蚀坑法研究了氢区熔硅单晶热处理缺陷形成机理。 通过变温热处理,发现氢区熔硅单晶热处理缺陷主要是由氢沉淀引起的。沉淀过程可能首先是Si-H键分解,然后是氢的扩散聚集,测出沉淀过程激活能是56.000±3000卡/克分子,它可能是Si-H键的分解激活能。沉淀物的析出面是{111}晶面,几何形态起始近似球状,然后变成扁椭球,最后是沿<110>方向拉长的片状沉淀物。 随着沉淀物的长大,在一定温度下(约600-700℃)会在沉淀物周围发射稜柱位错环,其分布形态和热处理温度有关。高温热处理时,沉淀物周围能发射出高对称的多组稜柱位错环,形成“星形”位错群。稜柱位错的稜柱面是{111}晶面,柏氏矢量是a╱2<110>。发射方向是<110>方向,位错线是<112>方向。
In this paper, thin-layer electron microscopy, x-ray diffraction morphology and metallographic pits have been used to study the formation mechanism of defects in the single-crystal Si heat-treated hydrogen region. Through the variable temperature heat treatment, it was found that the defect of the heat treatment of the single crystal of the molten silicon in the hydrogen region is mainly caused by the hydrogen precipitation. Precipitation process may be the first Si-H bond decomposition, followed by diffusion of hydrogen aggregation, the activation energy was measured precipitation process is 56.000 ± 3000 cal / mol molecules, it may be Si-H bond decomposition activation energy. The precipitation of precipitates is the {111} crystal plane, and the geometry begins approximately spherical, then becomes an oblate ellipsoid and finally a platelet elongated in the <110> direction. With the growth of the precipitate, prismatic dislocation loops are emitted around the precipitate at a certain temperature (about 600-700 ° C), and its distribution is related to the heat treatment temperature. High-temperature heat treatment, the precipitate can be emitted around the highly symmetric group of prismatic dislocation loops, forming a “star” dislocation group. The prismatic surface of the prism dislocation is the {111} crystal plane, and the Bohr’s vector is a ½2 <110>. The emission direction is <110> and the dislocation line is <112>.