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本文讨论了GaAs/AlGaAs异质结界面的H线发光及其性能。用双晶X射线衍射及皮秒光致发光证明了H线与界面质量密切相关,并且有相似于激子跃迁的寿命行为。用限制于异质结界面势阱的二维电子(或空穴)与分布于GaAs边的三维空穴(或电子)组成的二维激子效应,解释了H线的实验结果。并讨论了不同外延生长的异质结与界面有关的发光行为。
This article discusses the H-line luminescence and its properties at the GaAs / AlGaAs heterojunction interface. The double-crystal X-ray diffraction and picosecond photoluminescence proved that the H-line is closely related to the interface quality and has a lifespan behavior similar to the exciton transition. The experimental results of the H-line are explained by the two-dimensional exciton effect consisting of two-dimensional electrons (or holes) confined to the heterojunction interfacial potential well and three-dimensional holes (or electrons) distributed along the GaAs side. The luminescence behaviors of different epitaxial growth heterojunctions and interfaces are also discussed.