日本电气公司研制了一种 DRAM 的256MB 级的新型铝丝。这种丝材是具有双重结构的记忆丝。一种是钛和氮化钛在硅衬底的绝缘薄膜上沉积以后蒸发铝而获得铝丝。另一种是按钛、铝丝、钛的顺序进行沉积的。铝丝直径为0.25μm,是在每层用连续溅射方法沉积后,用 EC 软片而制备成的。以1千万 A/cm~2电流密度进行实验时,单 NEC has developed a 256MB new aluminum wire for DRAM. This kind of wire is a double structured memory wire. One is that titanium and titanium nitride are deposited on an insulating film of a silicon substrate to evaporate aluminum to obtain an aluminum wire. The other is in the order of titanium, aluminum wire, titanium deposition. The aluminum wire was 0.25 μm in diameter and was made from EC film after each layer was deposited by a continuous sputtering method. At 10 million A / cm ~ 2 current density experiment, the single