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本文介绍了氧氮化物SiO_xN_r中的辐射效应。这种氧氮化物薄膜由热生长SiO_2层在1000℃氨-氮气氛中氮化处理形成,其特点具有高的原始正电荷陷阱密度(3-6×10~(11)电荷/cm~2)和低的界面态电荷密度(2-4×10~(10)态/eV/cm~2)。采用俄歇光谱分析薄膜的化学成份指出,在整个氧氮化物薄层内部都有氮的分布,其中在界面附近分布的浓度较高,没有发现可动离子污染或在高电场下有电荷注入现象。在辐射剂低于1×10~6拉德(Si)的场合下,这种氮氧化物的辐射灵敏度比热氧化物改善2-3倍,并且也不增加界面态密度。最后讨论了一种为满足界面附近的正电荷俘获的掺杂方法。
This article describes the radiation effects of oxynitride SiO_xN_r. The oxynitride film is formed by nitridation of a thermally grown SiO 2 layer at 1000 ° C in an ammonia-nitrogen atmosphere and is characterized by a high initial positive charge trap density (3-6 × 10 11 / cm 2) And low interfacial charge density (2-4 × 10 ~ (10) state / eV / cm ~ 2). The chemical composition of the thin film analyzed by Auger spectroscopy indicates that there is a distribution of nitrogen throughout the oxynitride thin layer where concentrations are high distributed near the interface and no mobile ions are contaminated or charged at high electric fields . In the case of radiators below 1 × 10 -6 rad, the nitrogen oxides have 2-3 times better radiation sensitivity than thermal oxides and do not increase the interface state density. Finally, a doping method to satisfy the positive charge trapping in the vicinity of the interface is discussed.