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采用显微拉曼光谱研究了掺氮的类金刚石薄膜 ,该薄膜分别经过能量密度为 300, 750和 1500 W/mm2氩离子激光的退火处理。分析结果表明氮原子在类金刚石薄膜中形成了 C－ N键制 约了 C－ H键的形成。由于 C－ N键的键能比 C－ H键的键能大得多，因此在激光退火过程中 C－ N 键不易分解。所以随着氮含量的增加，类金刚石薄膜的激光退火后石墨化程度明显降低，具有比较 好的热稳定性。而非掺氮的类金刚石薄膜由于 C－ H键含量比较高，因此激光退火后容易石墨化。
The nitrogen doped diamond-like carbon films were investigated by Raman microscopy. The films were annealed with argon ion laser with energy densities of 300, 750 and 1500 W / mm2, respectively. The results show that the formation of C-H bonds by the formation of C-N bonds in the diamond-like carbon film by nitrogen atoms restricts the formation of C-H bonds. Since the bond of the C-N bond is much larger than the bond of the C-H bond, the C-N bond is not easily decomposed during laser annealing. Therefore, with the increase of nitrogen content, the degree of graphitization of diamond-like carbon films after laser annealing is significantly reduced, and has good thermal stability. The non-nitrogen-doped diamond-like carbon film due to the C-H bond content is relatively high, so after laser annealing easily graphitized.