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由于溅射装置能提供高熔点的、厚度均匀的、高纯度的以及介质材料的薄膜等等的优点，所以它是薄膜制造不可缺少的一门技术。但由于它沉积速率较低，所以在工业上使用颇不经济。 近年来发展起来的磁控管式溅射装置的沉积速率对于铜可达 ２． ５μ／分和电子束蒸发速率相仿，而且克服了电子束蒸发所存在的。次电子对基片的轰击和Ｘ射线对基片的损伤的缺点，所以人们往往又称它为快速溅射装置或低温溅射装置。 本文对这种装置的基本原理、结构分类、应用场合和设计注意事项作了综合的报导。
It is an indispensable technology in thin film manufacturing because it provides the advantages of high melting point, uniform thickness, high purity, and thin films of dielectric materials and the like. However, due to its low deposition rate, it is not economical to use industrially. The deposition rates of magnetron sputtering devices developed in recent years are up to 2 for copper. 5μ / min and electron beam evaporation rate similar to, and to overcome the electron beam evaporation exists. Sub-electron bombardment of the substrate and X-ray damage to the substrate defects, so people often referred to it as a rapid sputtering device or a low-temperature sputtering device. In this paper, the basic principles of this device, the structure classification, applications and design considerations made a comprehensive report.