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提出了一种插入损耗较低、介质薄膜生长在桥膜上的新结构微波MEMS开关.该开关桥膜由介质/金属/硅三种薄膜构成,并采用键合和自停止腐蚀工艺成功制备.详细论述该开关的原理、设计和制备过程.磁控溅射制备出介电常数为24的Ta2O5作为介质薄膜,利用光刻剥离技术使该介质薄膜图形化.实验结果显示,这种介质薄膜在桥膜上的新结构开关的插入损耗较低,在传输线金属薄膜厚度仅为0.5μm的情况下,频率为2GHz时插入损耗仅为0.06dB,在直流到20GHz的频率范围内插入损耗均低于0.5dB.
A new microwave MEMS switch with low insertion loss and dielectric film grown on the bridge membrane is proposed.The switch bridge membrane is composed of three kinds of thin films of dielectric / metal / silicon and successfully prepared by bonding and self-stopping etching process. The principle, design and preparation process of the switch are discussed in detail.The Ta2O5 dielectric constant of 24 is prepared by magnetron sputtering as a dielectric thin film, and the dielectric thin film is patterned by photolithographic lift-off technique.The experimental results show that the dielectric thin film The insertion loss of the new structure switch on the bridge membrane is low, and the insertion loss is only 0.06dB at the frequency of 2GHz when the thickness of the transmission line metal film is only 0.5μm. The insertion loss in the frequency range of DC to 20GHz is lower than 0.5dB.