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在不同氮气浓度、不同溅射气压和衬底温度为20～370℃的条件下,分别在多种衬底上采用反应磁控溅射法沉积AlN薄膜。X射线衍射图谱表明:温度大于180℃时可在多种衬底上沉积出具有c轴择优取向的纤锌矿AlN薄膜。衬底温度和溅射时间的增加有利于薄膜结晶性的改善。1.5Pa的纯氮气气氛和Si(100)衬底是最佳择优生长条件。由紫外-可见光透射谱计算得到:在石英衬底上沉积的薄膜折射率为1.80～1.85,膜厚约为1μm、光学能隙为6.1eV。原子力显微镜照片表明:在Si(100)衬底上制备的薄膜表面平滑,均方根粗糙度为2.2～13.2nm。
AlN thin films were deposited on various substrates by reactive magnetron sputtering at different nitrogen concentrations, different sputtering pressures and substrate temperatures of 20 ~ 370 ℃. The X-ray diffraction pattern shows that the wurtzite AlN film with c-axis preferred orientation can be deposited on various substrates at temperatures higher than 180 ℃. The increase of substrate temperature and sputtering time is conducive to the improvement of the crystallinity of the film. The pure nitrogen atmosphere of 1.5 Pa and the Si (100) substrate are the best preferential growth conditions. From UV-visible transmission spectra calculated: the refractive index of the film deposited on a quartz substrate 1.80 ~ 1.85, a film thickness of about 1μm, the optical energy gap of 6.1eV. AFM photographs show that the surface of Si (100) substrate is smooth and the root mean square roughness is 2.2 ~ 13.2nm.