应用重离子加速器和 2 52 Cf源进行单粒子翻转效应实验 ,测量得到 IDT系列和 HM系列静态随机存取存储器的单粒子翻转重离子 L ET阈值为 4～ 8Me V· cm2 /mg,单粒子翻转饱和截面为 10 -7cm2 · bit-1量级 ,位单粒子翻转截面随集成度的提高而减小。实验结果表明 ,可以用 2 52 Cf源替代重离子加速器测量静态随机存取存储器的单粒子翻转饱和截面 Singleton inversion experiment was carried out with heavy ion accelerator and 2 52 Cf source. The singleton inversion heavy ion L ET threshold of IDT series and HM series static random access memory was measured to be 4 ~ 8 MeV · cm2 / mg, The saturation cross section is on the order of 10 -7 cm 2 · bit -1, and the inversion cross section of single particles decreases with the increase of the integration degree. The experimental results show that a single 522 Cf source can be used instead of a heavy ion accelerator to measure the single-particle upset saturation section of static random access memory