利用新型全固源分子束外延技术 ,对 1 .5 5 μm波段的 In As P/ In Ga As P应变多量子阱结构的生长进行了研究。实验表明 ,较低的生长温度或较大的 / 束流比有利于提高应变多量子阱材料的结构质量 ,而生长温度对材料的光学特性有较大的影响。在此基础上生长了分别限制多量子阱激光器结构 ,制作的氧化物条形宽接触激光器实现了室温脉冲工作 ,激射波长为 1 5 63 nm,阈值电流密度为 1 .4k A/ cm2 。这是国际上首次基于全固源分子束外延的 1 .5 5 μm波段 In As P/ In Ga As P多量子阱激光器的报道 The growth of In As P / In Ga As P strain multiple quantum well structure in the band of 1 .5 5 μm has been studied by the new all solid-state molecular beam epitaxy technique. Experiments show that the lower growth temperature or larger beam / beam ratio is conducive to improving the structure quality of strain MQW materials, and the growth temperature has a greater impact on the optical properties of the material. On the basis of this, a series of confinement MQW lasers were fabricated. The oxide strip wide contact laser was fabricated at room temperature. The lasing wavelength was 1563 nm and the threshold current density was 1.4 kA / cm2. This is the first report of the 1.55 μm band In As P / In Ga As P multiple quantum well laser based on all solid-source molecular beam epitaxy in the world