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近年来,超高频低噪声晶体管得到了广泛的应用,从而促进了这种器件性能的进一步提高。如已制得6千兆赫下噪声为3.3分贝的管子。众所周知,左右超高频晶体管性能的关键参数是元件横向和纵向的几何尺寸,其发展结果是横向尺寸愈作愈细,纵向尺寸愈作愈浅,刻蚀细条和浅结扩散就成为制作超高频器件工艺的特点。在确定材料参数和特性后,纵向几何尺寸只与扩散条件有关,横向几何尺寸(包括基极、发射极、基极—发射极间距、电
In recent years, ultra-high frequency and low-noise transistors have been widely used, thus contributing to further improve the performance of this device. For example, tubes with a noise of 3.3 dB at 6 GHz have been made. As we all know, the key parameters of the performance of the left and right UHF transistors are the horizontal and vertical geometrical dimensions of the components. As a result of the development, the horizontal size becomes smaller and the vertical size grows more shallow. Frequency device technology features. After determining the material parameters and characteristics, the vertical geometrical dimensions are only related to the diffusion conditions. The lateral geometries (including base, emitter, base-emitter spacing,