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最近,日本电子总研固体物性研究所,已研究成在Si单晶上外延生长GaP单晶的技术。GaP是一种宽禁带半导体材料。比较容易控制其导电类型(n型或p型),因而做为可见发光二极管(波长为7000(?)或5570(?))正在得到应用。 GaP发光二极管最有希望的应用,是文字或图像显示板上的应用。从这类应用的实施角度来看,必须要解决如下问题:要确立高发光效率的优质GaP单晶的制备技术及其批量生产技术。
Recently, the Institute of Solid State Physics of Japan Electronics Research Institute, has been studied on the Si single crystal epitaxial growth of GaP single crystal technology. GaP is a wide bandgap semiconductor material. It is easier to control the conductivity type (n-type or p-type) and is being used as a visible light-emitting diode (at a wavelength of 7000 (?) Or 5570 (?)). The most promising application of GaP LEDs is for text or image display applications. From the perspective of the implementation of such applications, the following problems must be solved: To establish a high-efficient GaP single crystal preparation technology and its mass production technology.