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以光子晶体Fabry-Perot腔为例,提出了全电子束光刻制作光子晶体波导器件的解决方案.曝光光子晶体区域时采用较小的曝光步长,同时引入额外的邻近效应补偿本征邻近效应,从而获得高质量的掩模图形.曝光较长的输入、输出波导时,采用较大的曝光步长以提高电子束扫描速度,同时在波导的写场(write-field)过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响.实验结果证明,这种方法既能保持小孔制作需要的高精度,也能很大程度上提高光刻效率.
Taking the Fabry-Perot cavity of photonic crystal as an example, a solution of all-electron beam lithography for photonic crystal waveguide device is proposed.The exposure step of photonic crystal region uses a smaller exposure step, and introduces an additional proximity effect to compensate for the intrinsic proximity effect , Resulting in a high quality mask pattern.When exposing longer input and output waveguides, a larger exposure step is used to increase the electron beam scanning speed while introducing a cone at the write-field transition of the waveguide Shaped waveguide in order to reduce the effect of stitching error of the write field on the optical transmission efficiency.The experimental results show that this method can not only maintain the high precision required for the production of small holes, but also greatly improve the lithography efficiency.