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从置于低氧压真空中的 In+In_2O_3源里,借助热蒸发技术已制成高透射率(在可见光范围内透射率超过90%)和高导电性(电阻率(?)2×10~(-4)欧姆·厘米)的氧化铟(非掺杂)薄膜。其特性可与曾报导过的最佳的掺锡氧化铟薄膜相媲美、甚至更好,并有极好的重复性。虽然电子浓度相当高(≥4×10~(20)/厘米~3),但霍尔效应测量表明:低电阻率主要是良好的电子迁移率((?)70厘米~2/伏·秒)所致。X 射线衍射测量清楚地表明:多晶氧化铟结构具有一个从10.07到10.11埃的晶格常数范围。电解质电反射率光谱至少显示出四个临界跃迁。根据这些跃迁我们确定了直接与间接的光学能带隙(分别为(?)3.56和2.69电子伏特)。同时还观察到导带电子密度所致的 Burstein 位移。文章就上述及其他结果与工艺过程细节的讨论一道报导。
From the source of In + In_2O_3 placed under a low oxygen pressure vacuum, high transmittance (over 90% transmittance in the visible range) and high conductivity (resistivity (?) 2 x 10? (-4) ohm.cm) indium oxide (undoped) film. Its characteristics are comparable to or better than the best tin-doped indium oxide films ever reported and have excellent repeatability. Although the electron concentration is quite high (≥4 × 10 ~ (20) / cm ~ 3), the Hall effect measurements show that the low resistivity is mainly good electron mobility (70 ~ 2 / V · s) Due. X-ray diffraction measurements clearly show that the polycrystalline indium oxide structure has a lattice constant range from 10.07 to 10.11 Angstroms. Electrolytic reflectance spectra show at least four critical transitions. Based on these transitions we determined the direct and indirect optical bandgaps (? 3.56 and 2.69 electron volts, respectively). The Burstein shift due to conduction electron density was also observed. The article reports on the above and other findings and discussion of the details of the process.