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本文介绍半导体器件计算机模拟的物理模型和计算方法.以分析微波崩越二极管的大信号时间域模拟说明进行微波半导体计算机模拟的原理和过程,并给出对工作频率为40千兆赫的双漂移砷化镓崩越二极管进行计算机模拟的计算结果.
In this paper, the physical model and calculation method of computer simulation of semiconductor devices are introduced.The principle and process of computer simulation of microwave semiconductor are demonstrated by analyzing the large-signal time domain of microwave collapsing diode, and the dual-drift arsenic with operating frequency of 40 gigahertz Calcium gallium avalanche diode calculated by the computer simulation results.