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氮化镓(Ga N)作为新一代半导体材料,具有输出功率大和效率高等特点,因此,Ga N微波功率器件成为近几年研究的热点。随着Ga N功放管的功率不断提高,以Ga N为基础的微波功率器件在应用上取得了很大的进步。本文针对Ga N功放管的特点和现状进行了介绍,利用二次谐波控制技术和功率合成技术设计了S波段高效率内匹配功率放大器。电路采用南京电子器件研究所自主研发的栅宽为12mm的Ga N HEMT,设计的内匹配功率放大器在2.7~3.5GHz频带内,输出功率大于47d Bm,功率增益大于10d B,功率附加效率达到70%。
As a new generation semiconductor material, gallium nitride (Ga N) has the characteristics of high output power and high efficiency. Therefore, the Ga N microwave power device has become a hot spot in recent years. With the increasing power of Ga N power amplifier tube, GaN-based microwave power devices have made great progress in application. In this paper, the characteristics and current situation of Ga N power amplifier tube are introduced. The S-band high efficiency internal matching power amplifier is designed by using the second harmonic control technology and power synthesis technology. The circuit adopts Ga N HEMT with a gate width of 12mm independently developed by Nanjing Institute of Electronic Devices. The designed matched power amplifier has an output power of more than 47d Bm and a power gain of more than 10d B in a frequency band of 2.7 to 3.5GHz. The additional power efficiency reaches 70 %.