A novel terminal-optimized triple RESURF LDMOS(TOTR-LDMOS) is proposed and verified in a 0.25-μm bipolarCMOS-DMOS(BCD) ......

LDMOS（LateralDouble—DiffusedMOsFET）是一种横向功率器件，易于与低压信号以及其他器件单片集成。且有高耐压、高增益，低失真等优点，被......