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[期刊论文] 作者：陈炳欣,,
来源：集成电路应用 年份：2015
近年来,国际IC产业变化加快,几家龙头大厂不断增加资本投入力度,制程工艺也得到提升。与此同时,国内IC业因为"国家集成电路产业基金"(大基金)等的设立,受到业内外的广泛关注...
[期刊论文] 作者：杨乐,叶甜春,吴斌,张瑞齐,,
来源：Journal of Semiconductors 年份：2015
This paper presents a turbo decoder supporting all 188 block sizes in 3GPP long term evolution(LTE)standard which can be employed in the LTE micro-e Nod B syste...
[期刊论文] 作者：潘志鹏,吴斌,尉志伟,叶甜春,,
来源：哈尔滨工程大学学报 年份：2015
针对IEEE 802.11i协议中多种安全协议实现进行研究,结合以IEEE 802.11ac协议为代表的下一代无线局域网（WLAN）系统对高吞吐率的需求,提出了一种支持WEP/TKIP/CCMP协议的多模、高...
[期刊论文] 作者：罗惠文,吴斌,尉志伟,叶甜春,,
来源：微电子学与计算机 年份：2015
结合一款基于MIPS14K内核的SoC中AHB总线矩阵的设计需求,分析单层AHB总线的特性及不足,提出并实现了一种可配置、层次化、高效的AHB总线矩阵体系架构.该总线矩阵符合AHB lite...
[期刊论文] 作者：罗彦彬,马成炎,甘业兵,钱敏,叶甜春,,
来源：Journal of Semiconductors 年份：2015
An inductorless multi-mode RF front end for a global navigation satellite system(GNSS) receiver is presented.Unlike the traditional topology of a low noise ampl...
Impact of continuing scaling on the device performance of 3D cylindrical junction-less charge trappi
[期刊论文] 作者：李新开,霍宗亮,靳磊,姜丹丹,洪培真,徐强,唐兆云,李春龙,叶甜春,,
来源：Journal of Semiconductors 年份：2015
This work presents a comprehensive analysis of 3D cylindrical junction-less charge trapping memory device performance regarding continuous scaling of the struct...
,Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristic
[期刊论文] 作者：王艳蓉,杨红,徐昊,王晓磊,罗维春,祁路伟,张淑祥,王文武,闫江,朱慧珑,赵超,陈大鹏,叶甜春,
来源：中国物理B（英文版） 年份：2015
A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce t...
Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics
[期刊论文] 作者：王艳蓉,杨红,徐昊,王晓磊,罗维春,祁路伟,张淑祥,王文武,闫江,朱慧珑,赵超,陈大鹏,叶甜春,,
来源：Chinese Physics B 年份：2015
A multi-deposition multi-annealing technique(MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce th...
Influence of ultra-thin TiN thickness(1.4 nm and 2.4 nm) on positive bias temperature instability(PB
[期刊论文] 作者：祁路伟,杨红,任尚清,徐烨峰,罗维春,徐昊,王艳蓉,唐波,王文武,闫江,朱慧珑,赵超,陈大鹏,叶甜春,,
来源：Chinese Physics B 年份：2015
The positive bias temperature instability(PBTI) degradations of high-k/metal gate(HK/MG) n MOSFETs with thin Ti N capping layers(1.4 nm and 2.4 nm) are systemic...
Characterization of positive bias temperature instability of NMOSFET with high-k/metal gate last pro
[期刊论文] 作者：任尚清,杨红,唐波,徐昊,罗维春,唐兆云,徐烨锋,许静,王大海,李俊峰,闫江,赵超,陈大鹏,叶甜春,王文武,,
来源：Journal of Semiconductors 年份：2015
Positive bias temperature instability(PBTI) characteristics and degradation mechanisms of NMOSFET with high-k/metal gate last process have been systematically i...
[期刊论文] 作者：许淼,殷华湘,朱慧珑,马小龙,徐唯佳,张永奎,赵治国,罗军,杨红,李春龙,孟令款,洪培真,项金娟,高建峰,徐强,熊文娟,王大海,李俊峰,赵超,陈大鹏,杨士宁,叶甜春,,
来源：Journal of Semiconductors 年份：2015
Sub-20 nm node bulk FinFET PMOS devices with an all-last high-k/metal gate(HK/MG) process are fabricated and the influence of a series of device parameters on t...
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