搜索筛选:
搜索耗时3.8139秒,为你在为你在102,285,761篇论文里面共找到 5 篇相符的论文内容
类      型:
[期刊论文] 作者:Lishu Zhang,Yi Zhou,Xinyue Dai,Zhenyang Zhao,Hui Li, 来源:中国物理B(英文版) 年份:2017
Lead nanowire occupies a very important position in an electronic device.In this study,a genetic algorithm (GA) method has been used to simulate the Pb nanowire...
[期刊论文] 作者:Xinyue Dai,Yi Zhou,Jie Li,Lishu Zhang,Zhenyang Zhao,Hui Li, 来源:中国物理B(英文版) 年份:2017
Electronic transport properties of single-wall boron nanotube (BNT) with different chiralities,diameters,some of which are encapsulated with silicon,germanium,a...
[期刊论文] 作者:Yinghua Zhang,Huifang Liu,Xinyue Dai,Hang Li,Xiaohan Zhou,Shizhu Chen,Jinchao Zhang,Xing-Jie Liang,Zhenhua, 来源:纳米研究(英文版) 年份:2021
Tumor hypoxia has been considered to induce tumor cell resistance to radiotherapy and anticancer chemotherapy,as well as predisposing for increased tumor metast...
[期刊论文] 作者:Deping Li,Qing Sun,Yamin Zhang,Xinyue Dai,Fengjun Ji,Kaikai Li,Qunhui Yuan,Xingjun Liu,Lijie Ci, 来源:纳米研究(英文版) 年份:2021
Carbon-based material has been regarded as one of the most promising electrode materials for potassium-ion batteries (PIBs).However,the battery performance based on reported porous carbon electrodes is still unsatisfactory,while the in-dept......
[期刊论文] 作者:Lan Bi,Yixu Yao,Qimeng Jiang,Sen Huang,Xinhua Wang,Hao Jin,Xinyue Dai,Zhengyuan Xu,Jie Fan,Haibo Yin,, 来源:半导体学报(英文版) 年份:2022
Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measure-ments.The overhang......
相关搜索: