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[会议论文] 作者：Xinxin Yang,Xiaoxu Wei,Junzhuan Wang,Yi Zhao,Yi Shi,
来源：International Conference on Nanoscience & Technology,China 2 年份：2013
Owning to its sharp metal-insulator transition (MIT) at ~67 ℃ accompanied by several orders of magnitude changes in electrical resistance and ultra-fast increase in infrared transmittance, VO2 is beco...
Study of Surface Diffusion in Epitaxial Growth of Semiconductor Nanomaterials by Cathodoluminescence
[会议论文] 作者：Jianyu Wang,Yao Yin,Sun Huabin,Dakuan Zhang,Peng Chen,Junzhuan Wang,Youdou ZhengTakashi Sekiguchi,Yi,
来源：The 6th International Conference on Nanoscience and Technolo 年份：2015
Surface diffusion usually plays a critical role in the epitaxial growth process of semiconductor nanomaterials,dominating their morphologies and influencing basic properties.Cathodoluminescence measur...
Structural Evolution of Microcrystalline Ge-rich Si1-xGex Films Deposited by Jet-ICPCVD in Annealing
[会议论文] 作者：Yu Wang,Meng Yang,Gang Wang,Xiaoxu Wei,Junzhuan Wang,Yun Li,Zewen Zou,Youdou Zheng,Yi Shi,
来源：The 6th International Conference on Nanoscience and Technolo 年份：2015
Ge-rich Si1-xGex films with a hybrid amorphous/nanocrystalline structure were deposited by jet-type inductively coupled plasma chemical-vapor deposition(jet-ICPCVD)[1].The structural evolution of the...
[会议论文] 作者：Yang Cui,Run Xin,Zhihao Yu,Yiming Pan,Zhun-Yong Ong,Xiaoxu Wei,Junzhuan Wang,Yun Wu,Tangsheng Chen,Yi,
来源：The 6th International Conference on Nanoscience and Technolo 年份：2015
WS2 is an attractive two-dimensional semiconductor material for electronic and optoelectronic device applications due to its high phonon limited mobility compared to other transition metal dichalcogen...
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