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  5. Structural Evolution of Microcrystalline Ge-rich Si1-xGex Films Deposited by Jet-ICPCVD in Annealing

Structural Evolution of Microcrystalline Ge-rich Si1-xGex Films Deposited by Jet-ICPCVD in Annealing

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：guyehanxing
【摘 要】
：
Ge-rich Si1-xGex films with a hybrid amorphous/nanocrystalline structure were deposited by jet-type inductively coupled plasma chemical-vapor deposition(jet-ICPCVD)[1].The structural evolution of the
【作 者】
：
Yu Wang Meng Yang Gang Wang Xiaoxu Wei Junzhuan Wang Yun Li Zewen Zou Youdou Zheng Yi Shi 
【机 构】
：
Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and En
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
【发表日期】
：
2015年5期
【关键词】
：
SiGe alloy film microstructure annealing 
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　　Ge-rich Si1-xGex films with a hybrid amorphous/nanocrystalline structure were deposited by jet-type inductively coupled plasma chemical-vapor deposition(jet-ICPCVD)[1].The structural evolution of the deposited films after annealing at various temperatures(Ta)was investigated.Experimental results show that the as-deposited film is hybrid-structured with amorphous and clusters.As arising Ta continually,a transformation from clusters to small SiGe NCs and finally to composite NCs with Ge core and SiGe shell is revealed.
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