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[期刊论文] 作者：Liu Ci-Hui,Liu Bing-Ce,Fu Zhu-Xi,
来源：中国物理B(英文版) 年份：2008
ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition (MOCVD) at different total gas flow rates. The current versus v...
[期刊论文] 作者：SHI Yuan-Yuan,TIAN Ke,LIN Bi-Xia,FU Zhu-Xi,
来源：中国物理快报(英文版) 年份：
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[期刊论文] 作者：LEI Huan,LIU Ci-Hui,LIN Bi-Xia,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2005
The capacitance-voltage and current-voltage properties of the samples before and after annealing are investigated at 300 K and 195K. It is found that the interf...
[期刊论文] 作者：ZHANG Wei-Ying,ZHONG Sheng,SUN Li-Jie,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2008
N-ZnO/p-Si heterojunctions are prepared by sputtering deposition of intrinsic ZnO films on p-Si substrates.Thicknesses of ZnO films are altered by varying the d...
[期刊论文] 作者：SU Jian-Feng,YAO Ran,ZHONG Ze,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2008
Undoped and Al-doped 3C-SiC films are deposited on Si(lO0) substrates by low-pressure chemical vapour deposition. Effects of aluminium incorporation on crystaJl...
[期刊论文] 作者：ZHAO Guo-Liang,LIN Bi-Xia,HONG Liang,MENG Xiang-Dong,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2004
ZnO thin films were successfully deposited on Si (100) substrates by chemical vapour deposition (CVD) at atmospheric pressure (1 atm). The only solid source use...
[期刊论文] 作者：XU Jin,ZHANG Zi-Yu,ZHANG Yang,LIN Bi-Xia,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2005
ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence a...
[期刊论文] 作者：ZHONG Sheng,ZHANG Wei-Ying,WU Xiao-Peng,LIN Bi-Xia,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2008
Nitrogen-doped ZnO (ZnO: N) films are prepared by thermal oxidation of sputtered Zn,3N,2 layers on Al,2O,3 substrates. The correlation between the structural an...
[期刊论文] 作者：ZHONG Ze,SUN Li-Jie,CHEN Xiao-Qing,WU Xiao-Peng,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2010
ZnO films are grown on Si(111)substrates by a metal organic chemical vapor deposition method.Samples with different stoichiometric composition of Zn and O are o...
[期刊论文] 作者：XV Xiao-Qiu,TIAN Ke,SHI Yuan-Yuan,ZHONG Sheng,ZHANG Wei-Ying,FU Zhu-Xi,
来源：中国物理快报（英文版） 年份：2008
The ultraviolet emission line at 3.315eV is observed at 8K in ZnO polycrystallne films and investigated by temperature-dependent photoluminescence spectra and c...
,Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnet
[期刊论文] 作者：SUN Li-Jie,HE Dong-Kai,XU Xiao-Qiu,ZHONG Ze,WU Xiao-Peng,LIN Bi-Xia,FU Zhu-Xi,
来源：中国物理快报(英文版) 年份：2010
We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in diffe...
[期刊论文] 作者：XIONG Gang,UCER K B,WILLIAMS R T,TANG Ping,LIN Bi-xia,FU Zhu-xi,
来源：电子显微学报 年份：2005
我们分别通过直流反应溅射及脉冲激光淀积法制备了ZnO多晶薄膜。X射线衍射结果显示出薄膜的c轴取向。原子力显微镜证实薄膜的多晶结构。两种方法制备的ZnO在光子激发下都发射...
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