【摘 要】
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Nitrogen-doped ZnO (ZnO: N) films are prepared by thermal oxidation of sputtered Zn,3N,2 layers on Al,2O,3 substrates. The correlation between the structural an
【机 构】
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Department of Physics, University of Science and Technology of China, Hefei 230026
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Nitrogen-doped ZnO (ZnO: N) films are prepared by thermal oxidation of sputtered Zn,3N,2 layers on Al,2O,3 substrates. The correlation between the structural and optical properties of ZnO: N films and annealing temperatures is investigated. X-ray diffraction result demonstrates that the as-sputtered Zn,3N,2 films are transformed into ZnO: N films after annealing above 600℃. X-ray photoelectron spectroscopy reveals that nitrogen has two chemical states in the ZnO: N films: the No acceptor and the double donor(N2)o. Due to the No acceptor, the hole concentration in the film annealed at 700℃ is predicted to be highest, which is also confirmed by Hall effect measurement. In addition, the temperature dependent photoluminescence spectra allow to calculate the nitrogen acceptor binding energy.
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