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[期刊论文] 作者：Richard N(o)tzel,
来源：国家科学评论（英文版） 年份：2017
A review is given of the exceptional electrochemical performance of epitaxial InN/InGaN quantum dots (QDs) as photoelectrodes for solar hydrogen generation by w...
[会议论文] 作者：Richard N(o)tzel,
来源：International Conference on Nanoscience & Technology,China 2 年份：2013
InN quantum dots (QDs) have been grown on thick InGaN layers with high In composition (>50%) by plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates [1].Optimized growth conditions...
Inter-facet composition modulation of Ⅲ-nitride nanowires over pyramid textured Si substrates by sta
[期刊论文] 作者：Wang,Hedong Chen,Hao Wang,Dan Wang,Changkun Song,Xingyu Wang,Hongjie Yin,Lujia Rao,Guofu Zhou,Richard N(o)tzel,
来源：纳米研究（英文版） 年份：2021
InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy(PA-MBE).The incidence angles of the highl...
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