InN quantum dots (QDs) have been grown on thick InGaN layers with high In composition (>50%) by plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates [1].Optimized growth conditions were identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation.The InN QDs grown on top of the optimized InGaN layer exhibited small size, high density which was tunable by the deposited InN amount, and clear photoluminescence emission up to room temperature.The InN/InGraN QDs, therefore,revealed excellent potential for intermediate band solar cells with the InGaN and InN quantum dot bandgap energies tuned to the best match of absorption to the solar spectrum.