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[学位论文] 作者：宓珉瀚,,
来源：西安电子科技大学 年份：2018
由于氮化镓基材料具有高迁移率、高电子饱和速率以及高击穿场强的特点,使得氮化镓基HEMT器件在毫米波功率器件和集成电路领域具有很大优势。对于毫米波功率器件,最大震荡频率...
[期刊论文] 作者：武盛,宓珉瀚,马晓华,杨凌,侯斌,郝跃,
来源：中国物理B:英文版 年份：2021
Ultra-thin barrier(UTB)4-nm-AlGaN/GaN normally-off high electron mobility transistors(HEMTs)having a high current gain cut-off frequency(fT)are demonstrated by the stress-engineered compressive SiN trench technology.The compressive in-situ ......
[会议论文] 作者：陈治宏, 宓珉瀚, 刘捷龙, 王鹏飞, 马晓华,
来源：年全国微波毫米波会议 年份：2022
对于薄势垒Ga N HEMT采用传统钝化方式后器件表面漏电严重的问题,我们提出了一种新型钝化方式,该方式重点在于对新片进行清洗后,立即淀积一层20nm的SiO2保护层,器件隔离工艺结束后,利用湿法腐蚀Si O2,之后再使用PECVD（plasma-enhanced chemical vapor deposition......
[期刊论文] 作者：宓珉瀚,张凯,赵胜雷,王冲,张进成,马晓华,郝跃,,
来源：Chinese Physics B 年份：2015
The influence of an N_2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor(HEMT) prepared by using a plasma-enhan...
Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at
[期刊论文] 作者：胡晟,杨凌,宓珉瀚,侯斌,刘晟,张濛,武玫,朱青,武盛,卢阳,
来源：中国物理B:英文版 年份：2020
The graded AlGaN:Si back barrier can form the majority of three-dimensional electron gases(3DEGs)at the GaN/graded AlGaN:Si heterostructure and create a composi...
[期刊论文] 作者：宓珉瀚,武盛,杨凌,何云龙,侯斌,张濛,郭立新,马晓华,郝跃,
来源：中国物理B:英文版 年份：2020
The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing...
[期刊论文] 作者：罗俊, 赵胜雷, 宓珉瀚, 侯斌, 杨晓蕾, 张进成, 马晓华,,
来源：null 年份：2015
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[期刊论文] 作者：宓珉瀚,张濛,武盛,杨凌,侯斌,周雨威,郭立新,马晓华,郝跃,
来源：中国物理B:英文版 年份：2020
A high performance InAlN/GaN high electron mobility transistor(HEMT)at low voltage operation(6-10 V drain voltage)has been fabricated.An 8 nm InAlN barrier laye...
[期刊论文] 作者：罗俊,赵胜雷,宓珉瀚,侯斌,杨晓蕾,张进成,马晓华,郝跃,
来源：中国物理B（英文版） 年份：2015
Frequency-dependent conductance measurements were carried out to investigate the trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility...
[期刊论文] 作者：罗俊,赵胜雷,宓珉瀚,陈伟伟,侯斌,张进成,马晓华,郝跃,,
来源：Chinese Physics B 年份：2016
The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors(HEMTs) with L_G= 1 μm~20 μm. With the...
Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky dr
[期刊论文] 作者：赵胜雷,宓珉瀚,侯斌,罗俊,王毅,戴杨,张进成,马晓华,郝跃,,
来源：Chinese Physics B 年份：2014
In this paper, we demonstrate that a Schottky drain can improve the forward and reverse blocking voltages(BVs)simultaneously in AlGaN/GaN high-electron mobility...
Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma
[期刊论文] 作者：何云龙,王冲,宓珉瀚,郑雪峰,张濛,赵梦荻,张恒爽,陈立香,张进成,马晓华,郝跃,,
来源：Chinese Physics B 年份：2016
In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Sc...
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