论文部分内容阅读
The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN/GaN high-electron-mobility transistors(HEMTs) with L_G= 1 μm~20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG= 3 μm. For the HEMT with L_G= 1 μm, breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G= 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage.A similar suppression of the impact ionization exists in the HEMTs with LG> 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG= 3 μm~20 μm, and their breakdown voltages are in a range of 140 V–156 V.
The effects of gate length L_G on breakdown voltage VBRare investigated in AlGaN / GaN high-electron-mobility transistors (HEMTs) with L_G = 1 μm ~ 20 μm. With the increase of L_G, VBRis first increased, and then saturated at LG = 3 For the HEMT with L_G = 1 μm, the breakdown voltage VBRis 117 V, and it can be enhanced to 148 V for the HEMT with L-_G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with LG> 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with LG = 3 μm ~ 20 μm, and their breakdown voltages are in a range of 140 V-156 V.