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在n型ZnO体单晶片上,首次采用N等离子体辅助金属有机化学气相沉积方法外延生长了p型ZnO薄膜,制成了同质ZnO的发光二极管(LED)原型器件;在室温下,观察到同质ZnO的LED施加电压后由电注入激发出紫外至绿光波段的光谱.
For the first time, an n-type plasma-enhanced metal organic chemical vapor deposition method was used to epitaxially grow a p-type ZnO thin film on a n-type ZnO single crystal wafer to fabricate a homogeneous ZnO LED prototype device. At room temperature, The homogenous ZnO LED excites the spectrum of the ultraviolet to green band by electrical injection after voltage is applied.