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现代的GaAs MESFET在输入功率增大时,都有输出功率饱和的现象。实验表明:这种功率饱和是由正向栅电导和反向栅-漏击穿等因素共同造成的。通过对平面结构和凹槽栅FET的二维数值模拟详细地研究了反向击穿电压。这些模拟表明:击穿发生在栅的漏侧边缘。根据数值模拟的结果提出了一个可以解析求解的耗尽层结构的模型。这一模型表明击穿电压反比于掺杂浓度和有源层厚度的乘积。
The modern GaAs MESFET has the phenomenon that the output power is saturated when the input power is increased. Experiments show that: This power saturation is caused by forward gate conductance and reverse gate - leakage breakdown and other factors together. The reverse breakdown voltage is studied in detail by two-dimensional numerical simulation of the planar structure and the trench gate FET. These simulations show that breakdown occurs at the drain-side edge of the gate. According to the numerical simulation results, a model of the depletion layer structure can be solved. This model shows the breakdown voltage inversely proportional to the product of doping concentration and active layer thickness.